bcx54 bcx55 bcx56 surface mount npn silicon transistor description: the central semiconductor bcx54, bcx55, and bcx56 types are npn silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. marking code: see marking code table on following page maximum ratings: (t a =25c) symbol bcx54 bcx55 bcx56 units collector-base voltage v cbo 45 60 100 v collector-emitter voltage v ceo 45 60 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 1.0 a peak collector current i cm 1.5 a continuous base current i b 100 ma peak base current i bm 200 ma power dissipation p d 1.3 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 96 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =30v 100 na i cbo v cb =30v, t a =125c 10 a i ebo v eb =5.0v 100 na bv cbo i c =100a (bcx54) 45 v bv cbo i c =100a (bcx55) 60 v bv cbo i c =100a (bcx56) 100 v bv ceo i c =10ma (bcx54) 45 v bv ceo i c =10ma (bcx55) 60 v bv ceo i c =10ma (bcx56) 80 v v ce(sat) i c =500ma, i b =50ma 0.5 v v be(on) v ce =2.0v, i c =500ma 1.0 v h fe v ce =2.0v, i c =5.0ma 40 h fe v ce =2.0v, i c =150ma 63 250 h fe v ce =2.0v, i c =150ma (bcx54-10, bcx55-10, BCX56-10) 63 160 h fe v ce =2.0v, i c =150ma (bcx54-16, bcx55-16, bcx56-16) 100 250 h fe v ce =2.0v, i c =500ma 25 f t v ce =5.0v, i c =10ma, f=100mhz 130 mhz sot-89 case r5 (20-november 2009) www.centralsemi.com
bcx54 bcx55 bcx56 surface mount npn silicon transistor sot-89 case - mechanical outline lead code: 1) emitter 2) collector 3) base (bottom view) device marking code bcx54 ba bcx54-10 bc bcx54-16 bd bcx55 be bcx55-10 bg bcx55-16 bm bcx56 bh BCX56-10 bk bcx56-16 bl www.centralsemi.com r5 (20-november 2009)
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